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Material (Index) Definition
Zn 
Zinc
ZnO 
Zinc Oxide

General characteristics: A wide-bandgap II-VI semiconductor; possible blue and violet emission and UV detection; also, studied as a material for TFTs; with a lattice structure close to GaN it can also be used as a substrate for GaN deposition; features high transparency to visible light.



Crystal structure: wurtzite
Lattice constant [nm]: ao = 0.32495, co = 052069
Density [g/cm3]: 5.66
Atomic concentration [cm-3]:
Melting point [oC]: 1975
Thermal conduct.[W/cm oC]
Th. expansion coeff.[1/oC]: 6.0x10-6, 3.0x10-6
Dielectric constant (static): 8.5
Refractive index: 2.008, 2.029
Energy gap [eV]: 3.4
Type of energy gap: direct
Drift mobility [cm2/V-sec]:
Electron: 200
Hole: 180
Intrinsic carrier conc. [cm-3]: < 106
ZnS 
Zinc Sulfide

General characteristics: A wide-bandgap II-VI semiconductor; potentially suitable for blue light emission.


Crystal structure: zinc blend
Lattice constant [nm]: 0.541
Density [g/cm3]: 4.08
Atomic concentration [cm-3]:
Melting point [oC]: 1,830
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant (static): 8.3
Refractive index: 2.4
Energy gap [eV]: 3.6
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 160
Hole: 5
Intrinsic carrier conc. [cm-3]:
ZnSe 
Zinc Selenide

General characteristics: in preparation


Crystal structure: zinc blend
Lattice constant [nm]: 0.566
Density [g/cm3]: 5.42
Atomic concentration [cm-3]:
Melting point [oC]: 1,520
Thermal conductivity [W/cm oC]:
Thermal expansion coefficient[1/oC]:
Dielectric constant (static): 9.2
Refractive index: 2.89
Energy gap [eV]: 2.6
Type of energy gap: direct
Drift mobility [cm2/V-sec]:
Electron: 540
Hole: 30
Intrinsic carrier conc. [cm-3]:

ZnTe 
Zinc Telluride

General characteristics: in preparation

Crystal structure:
Lattice constant [nm]: 0.61
Density [g/cm3]: 5.72
Atomic concentration [cm-3]:
Melting point [oC]: 1,295
Thermal conductivity [W/cm oC]:
Thermal expansion coefficient[1/oC]:
Dielectric constant (static): 9.7
Refractive index:
Energy gap [eV]: 2.28
Type of energy gap:
Drift mobility [cm2/V-sec]:
Electron: 350
Hole: 100
Intrinsic carrier conc. [cm-3]:

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