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Material
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Definition
Zn
Zinc
ZnO
Zinc Oxide
General characteristics:
A wide-bandgap II-VI semiconductor; possible blue and violet emission and UV detection; also, studied as a material for TFTs; with a lattice structure close to GaN it can also be used as a substrate for GaN deposition; features high transparency to visible light.
Crystal structure:
wurtzite
Lattice constant [nm]:
a
o
= 0.32495, c
o
= 052069
Density [g/cm
3
]:
5.66
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
1975
Thermal conduct.[W/cm
o
C]
Th. expansion coeff.[1/
o
C]:
6.0x10
-6
, 3.0x10
-6
Dielectric constant (static):
8.5
Refractive index:
2.008, 2.029
Energy gap [eV]:
3.4
Type of energy gap:
direct
Drift mobility [cm
2
/V-sec]:
Electron:
200
Hole:
180
Intrinsic carrier conc. [cm
-3
]:
< 10
6
ZnS
Zinc Sulfide
General characteristics:
A wide-bandgap II-VI semiconductor; potentially suitable for blue light emission.
Crystal structure:
zinc blend
Lattice constant [nm]:
0.541
Density [g/cm
3
]:
4.08
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
1,830
Thermal conduct.[W/cm
o
C]:
Th. expansion coeff.[1/
o
C]:
Dielectric constant (static):
8.3
Refractive index:
2.4
Energy gap [eV]:
3.6
Type of energy gap:
direct
Drift mobility [cm
2
/V sec]:
Electron:
160
Hole:
5
Intrinsic carrier conc. [cm
-3
]:
ZnSe
Zinc Selenide
General characteristics
: in preparation
Crystal structure:
zinc blend
Lattice constant [nm]:
0.566
Density [g/cm
3
]:
5.42
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
1,520
Thermal conductivity [W/cm
o
C]:
Thermal expansion coefficient[1/
o
C]:
Dielectric constant (static):
9.2
Refractive index:
2.89
Energy gap [eV]:
2.6
Type of energy gap:
direct
Drift mobility [cm
2
/V-sec]:
Electron:
540
Hole:
30
Intrinsic carrier conc. [cm
-3
]:
ZnTe
Zinc Telluride
General characteristics:
in preparation
Crystal structure:
Lattice constant [nm]:
0.61
Density [g/cm
3
]:
5.72
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
1,295
Thermal conductivity [W/cm
o
C]:
Thermal expansion coefficient[1/
o
C]:
Dielectric constant (static):
9.7
Refractive index:
Energy gap [eV]:
2.28
Type of energy gap:
Drift mobility [cm
2
/V-sec]:
Electron:
350
Hole:
100
Intrinsic carrier conc. [cm
-3
]:
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