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Material
(Index)
Definition
Si
Silicon
General characteristics:
the most widely used semiconductor, dominates entirely electronic applications; native oxide SiO
2
is a very high quality insulator; single crystal Si can be processed into wafers up to 300 mm in diameter which are essentially defect-free; Si features excellent mechanical properties and as such is broadly used in MEMS applications.
Crystal structure:
diamond
Lattice constant [nm]:
0.5431
Density [g/cm
3
]:
2.329
Atomic concentration [cm
-3
]:
5x10
22
Melting point[
o
C]:
1414
Thermal conductivity [W/cm-
o
C]:
1.3
Thermal expansion coeff. [
o
C
-1
]:
2.6x10
-6
Dielectric const. (static):
11.7
Refractive index:
3.42
Energy gap, Eg [eV]:
1.12
Type of energy gap: Indirect
Drift mobility [cm
2
/V-sec]:
Electron:
1,450
Hole:
450
Intrinsic carrier conc.[ cm
-3
]: 1.02x10
10
cm
-3
Donors:
phosphorous, arsenic, antimony
Acceptors:
boron
SiC
Silicon Carbide
General characteristics
: increasingly commonly used in manufacture of high-temperature, high-power devices; also used as a substrate for GaN deposition in blue laser/LED fabrication.
Crystal structure:
cubic (3C-SiC)
hexagonal (4H-SiC or 6H-SiC
)
Lattice constant [nm]:
0.436(C)
0.308(H)
Density [g/cm
3
]:
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
sublimes > 2,100
Thermal conduct.[W/cm
o
C]:
5
Th. expansion coeff.[1/
o
C]:
Dielectric constant:
9.7
9.7
Refractive index:
Energy gap [eV]:
2.3 (C)
3.03(H)
Type of energy gap:
indirect
Drift mobility [cm
2
/V sec]:
Electron
800(C)
400(H)
Hole
40 (C)
100 (H)
Intrinsic carrier conc. [cm
-3
]
Reference:
Go to Semiconductor Notes for more SiC information
SiGe
Silicon Germanium
General characteristics
: a IV-IV compound used a layer on which, upon its deposition on Si substrate, a layer of strained Si can be formed.
Crystal structure:
Lattice constant [nm]:
Density [g/cm
3
]:
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
Thermal conduct.[W/cm
o
C]:
Th. expansion coeff.[1/
o
C]:
Dielectric constant:
Refractive index:
Energy gap [eV]:
Type of energy gap:
Drift mobility [cm
2
/V sec]:
Electron:
Hole:
Intrinsic carrier conc. [cm
-3
]:
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