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Material (Index) Definition
Sb 
Antimony

Element from the Vth group of the periodic table; not a semiconductor; forms III-V compound semiconductors with selected elements from the IIIrd group of periodic table; n-type dopant in silicon.
GaSb 
Gallium Antimonide

General characteristics: a III-V compound featuring high electron AND hole mobilities.


Crystal structure: zinc blend
Lattice constant [nm]: 0.695
Density [g/cm3]: ....
Atomic concentration [cm-3]: .... x 1022
Melting point [oC]: ....
Thermal conduct.[W/cm oC]: ...
Th. expansion coeff.[1/oC] ....x10-6
Dielectric constant (static): 15
Refractive index: 3.9
Energy gap [eV]: 0.72
Type of energy gap direct
Drift mobility [cm2/V sec]:
Electron: 5,000
Hole: 1,000
Intrinsic carrier conc. [cm-3]....
InSb 
Indium antimonide

General characteristics: III-V semiconductor featuring very narrow energy gap and very high electron mobility; the former makes it highly suitable for infrared detection and thermal imaging while the latter makes it a material of great promise in ultra-high speed electronic devices.

Crystal structure: zinc blend
Lattice constant [nm]: 0.647
Density [g/cm3]:
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant: 18
Refractive index: 3.75
Energy gap [eV]: 0.18
Type of energy gap: direct
Electron mobility [cm2/V sec]: 80,000
Hole mobility [cm2/V sec]: 1,700
Intrinsic carrier conc. [cm-3]: ........
Material (Index) Definition
Sb 
In preparation
GaSb 
Gallium Antimonide

General characteristics: a III-V compound featuring high electron AND hole mobilities.


Crystal structure: zinc blend
Lattice constant [nm]: 0.695
Density [g/cm3]: ....
Atomic concentration [cm-3]: .... x 1022
Melting point [oC]: ....
Thermal conduct.[W/cm oC]: ...
Th. expansion coeff.[1/oC] ....x10-6
Dielectric constant (static): 15
Refractive index: 3.9
Energy gap [eV]: 0.72
Type of energy gap direct
Drift mobility [cm2/V sec]:
Electron: 5,000
Hole: 1,000
Intrinsic carrier conc. [cm-3]....
InSb 
Indium antimonide

General characteristics: III-V semiconductor featuring very narrow energy gap and very high electron mobility; the former makes it highly suitable for infrared detection and thermal imaging while the latter makes it a material of great promise in ultra-high speed electronic devices.

Crystal structure: zinc blend
Lattice constant [nm]: 0.647
Density [g/cm3]:
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant: 18
Refractive index: 3.75
Energy gap [eV]: 0.18
Type of energy gap: direct
Electron mobility [cm2/V sec]: 80,000
Hole mobility [cm2/V sec]: 1,700
Intrinsic carrier conc. [cm-3]: ........
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