Semiconductor Glossary, Developed Semi OneSource.
Google
 
            
Check out the new SemiconductorGlossary.com weBLOG!
















Search for material by chemical symbol:
Material (Index) Definition

Sulphur
ZnS 
Zinc Sulfide

General characteristics: A wide-bandgap II-VI semiconductor; potentially suitable for blue light emission.


Crystal structure: zinc blend
Lattice constant [nm]: 0.541
Density [g/cm3]: 4.08
Atomic concentration [cm-3]:
Melting point [oC]: 1,830
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant (static): 8.3
Refractive index: 2.4
Energy gap [eV]: 3.6
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 160
Hole: 5
Intrinsic carrier conc. [cm-3]:
CdS 
Cadmium Sulfide

General characteristics: II-VI semiconductor used primarily in light detection (IR, visible as well as longer wavelength UV)applications (photoresistors); also used in IR optics (e.g. waveguides, beam splitters...)


Crystal structure: wurzite (hexagonal)
Lattice constant [nm]:
Density [g/cm3]: 4.82
Atomic concentration [cm-3]:
Melting point [oC]: 1750
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant (static): 8.9
Refractive index: 2.5
Energy gap [eV]: 2.42
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 250
Hole
Intrinsic carrier conc. [cm-3]:
Back To Home! 


Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2002-2016. All rights reserved.