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Material (Index) Definition

Phosphorous
GaP 
Gallium Phosphide

General characteristics: unlike most of III-V binary semiconductors GaP features indirect bandgap but with some As and/or In added bandgap becomes direct; important compund in LED technology.


Crystal structure: zinc blend
Lattice constant [nm]: 0.545
Density [g/cm3]: 4.14
Atomic concentration [cm-3]: 4.94 x 1022
Melting point [oC]: 1457
Thermal conduct.[W/cm oC]: 1.1
Th. expansion coeff.[1/oC]: 4.65x10-6
Dielectric constant: 11.1
Refractive index: 3.02
Energy gap [eV]: 2.26
Type of energy gap: indirect
Electron mobility [cm2/V sec]: 250
Hole mobility [cm2/V sec]: 150
Intrinsic carrier conc. [cm-3]....
InP 
Indium Phosphide

General characteristics:

Crystal structure: zinc blend
Lattice constant [nm]: 0.586
Density [g/cm3]:
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant: 12.1
Refractive index: 3.37
Energy gap [eV]: 1.35
Type of energy gap: direct
Electron mobility [cm2/V sec]: 4,000
Hole mobility [cm2/V sec]: 600
Intrinsic carrier conc. [cm-3]: ..........
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