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Material (Index) Definition

Nitrogen
BN 
Boron Nitride

General characteristics: The widest bandgap material displaying semiconductor properties.

Energy gap [eV]: 6.4
Refractive index: 2.17
AlN 
Aluminum Nitride

General characteristics: Along with boron nitride (BN)the widest bandgap material displaying semiconductor properties. Also pursued as a material for ultra-short UV (down to 200 nm)detection devices.

Crystal structure: wurzite
Lattice constant [nm]: 0.311
Density [g/cm3]: 5.9
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant (static): 9
Refractive index: 2.2
Energy gap [eV]: 6.2
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron:
Hole:
Intrinsic carrier conc. [cm-3]:
GaN 
Gallium Nitride

General characteristics: Wide bandgap semiconductor used to make green, blue, and violet LEDs and laser diodes as well as high performance transistors (e.g. HEMT); intrinsically n-type but can be p-type doped; high thermal conductivity; heterostructures with lattice matched AlxGa1-xN and InxGa1-xN; see Semiconductor Note ote SN-9 for more information.

Crystal structure: Wurtzite(W) or Zinc Blend(ZB)
Lattice constant [nm]: 0.3189(W) 0.5186(ZB)
Density[g/cm3]: 6.15(W) 6.15(ZB)
Atomic concentration [cm-3]: 8.9 x 1022(W) 8.9 x 1022(ZB)
Melting point [oC]: 2,500(W) 2,500(ZB)
Thermal conduct.[W/cm oC]: 1.3(W) 1.3(W)
Th. expansion coeff.[1/oC]: .....x10-6
Dielectric constant (static): 8.9(W) 9.7(ZB)
Refractive index: 2.4(W) 2.3(ZB)
Energy gap [eV]: 3.4(W)
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 300(W) 1,000(ZB)
Hole; 350(ZB)
Intrinsic carrier conc. [cm-3]: .....


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