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Material (Index) Definition
In 
Indium
Element from the IIIrd group of periodic table; not a semiconductor; forms III-V compound semiconductors with selected elements from the Vth group of periodic table.
InP 
Indium Phosphide

General characteristics:

Crystal structure: zinc blend
Lattice constant [nm]: 0.586
Density [g/cm3]:
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant: 12.1
Refractive index: 3.37
Energy gap [eV]: 1.35
Type of energy gap: direct
Electron mobility [cm2/V sec]: 4,000
Hole mobility [cm2/V sec]: 600
Intrinsic carrier conc. [cm-3]: ..........
InAs 
Indium Arsenide

General characteristics: Narrow bandgap, but very high electron mobility III-V compound.


Crystal structure: zinc blend
Lattice constant [nm]: 0.6058
Density [g/cm3]:
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant: 12.5
Refractive index: 3.42
Energy gap [eV]: 0.36
Type of energy gap: direct
Electron mobility [cm2/V sec]: 22,600
Hole mobility [cm2/V sec]: 200
Intrinsic carrier conc. [cm-3]: ......
InSb 
Indium antimonide

General characteristics: III-V semiconductor featuring very narrow energy gap and very high electron mobility; the former makes it highly suitable for infrared detection and thermal imaging while the latter makes it a material of great promise in ultra-high speed electronic devices.

Crystal structure: zinc blend
Lattice constant [nm]: 0.647
Density [g/cm3]:
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant: 18
Refractive index: 3.75
Energy gap [eV]: 0.18
Type of energy gap: direct
Electron mobility [cm2/V sec]: 80,000
Hole mobility [cm2/V sec]: 1,700
Intrinsic carrier conc. [cm-3]: ........
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