Semiconductor Glossary, Developed Semi OneSource.
Check out the new weBLOG!

Search for material by chemical symbol:
Material (Index) Definition

General charactersitics: the most common semiconductor during "pre-silicon" era; better than Si mobilities of electrons and holes; key limitation of Ge is that unlike Si, its native oxide (GeO2)is a very low quality insulator.

Crystal structure: diamond
Lattice constant [nm]: 0.565
Density [g/cm3]: 5.32
Atomic concentration [cm-3]: 4.4 x 1022
Melting point [oC]: 937
Thermal conduct.[W/cm oC]: 0.58
Th. expansion coeff.[1/oC]: 5.9x10-6
Dielectric constant: 16.2
Index of refraction: 4.00
Energy gap [eV]: 0.66
Type of energy gap: indirect
Drift mobility [cm2/V sec]:
Electron: 3,900
Hole: 1,900
Intrinsic carrier conc.[cm-3]:2x1013
Silicon Germanium

General characteristics: a IV-IV compound used a layer on which, upon its deposition on Si substrate, a layer of strained Si can be formed.

Crystal structure:
Lattice constant [nm]:
Density [g/cm3]:
Atomic concentration [cm-3]:
Melting point [oC]:
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant:
Refractive index:
Energy gap [eV]:
Type of energy gap:
Drift mobility [cm2/V sec]:
Intrinsic carrier conc. [cm-3]:
Back To Home! 

Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2002-2016. All rights reserved.