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Definition
Ge
Germanium
General charactersitics:
the most common semiconductor during "pre-silicon" era; better than Si mobilities of electrons and holes; key limitation of Ge is that unlike Si, its native oxide (GeO
2
)is a very low quality insulator.
Crystal structure:
diamond
Lattice constant [nm]:
0.565
Density [g/cm
3
]:
5.32
Atomic concentration [cm
-3
]:
4.4 x 10
22
Melting point [
o
C]:
937
Thermal conduct.[W/cm
o
C]:
0.58
Th. expansion coeff.[1/
o
C]:
5.9x10
-6
Dielectric constant:
16.2
Index of refraction:
4.00
Energy gap [eV]:
0.66
Type of energy gap:
indirect
Drift mobility [cm
2
/V sec]:
Electron:
3,900
Hole:
1,900
Intrinsic carrier conc.[cm
-3
]:
2x10
13
SiGe
Silicon Germanium
General characteristics
: a IV-IV compound used a layer on which, upon its deposition on Si substrate, a layer of strained Si can be formed.
Crystal structure:
Lattice constant [nm]:
Density [g/cm
3
]:
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
Thermal conduct.[W/cm
o
C]:
Th. expansion coeff.[1/
o
C]:
Dielectric constant:
Refractive index:
Energy gap [eV]:
Type of energy gap:
Drift mobility [cm
2
/V sec]:
Electron:
Hole:
Intrinsic carrier conc. [cm
-3
]:
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