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Material (Index) Definition
Cd 
Cadmium
CdS 
Cadmium Sulfide

General characteristics: II-VI semiconductor used primarily in light detection (IR, visible as well as longer wavelength UV)applications (photoresistors); also used in IR optics (e.g. waveguides, beam splitters...)


Crystal structure: wurzite (hexagonal)
Lattice constant [nm]:
Density [g/cm3]: 4.82
Atomic concentration [cm-3]:
Melting point [oC]: 1750
Thermal conduct.[W/cm oC]:
Th. expansion coeff.[1/oC]:
Dielectric constant (static): 8.9
Refractive index: 2.5
Energy gap [eV]: 2.42
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 250
Hole
Intrinsic carrier conc. [cm-3]:
CdSe 
Cadmium Selenide

General characteristics: II-VI emiconductor compound potentially useful in various photonic device and solar cell applications; recently explored in the form of nanocrystalline quantum dot for LED applications.


Crystal structure: wurzite (hexagonal)
Lattice constant [nm]: a 0.429; c 0.7

Density [g/cm3]: 5.81
Atomic concentration [cm-3]:
Melting point [oC]: 1268
Thermal conduct.[W/cm K]: 0.04
Th. expansion coeff.[1/oC]:
Dielectric constant (static):
Refractive index: 2.4
Energy gap [eV]: 1.74
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 900
Hole
CdTe 
Cadmium Telluride

General characteristics: II-VI compound promising in solar cell applications; also, alloyed with mercury makes an efficient infrared detector.


Crystal structure: zinc blend
Lattice constant [nm]: 0.648
Density [g/cm3]: 5.85
Atomic concentration [cm-3]:
Melting point [oC]: 1091
Thermal conduct.[W/m K]: 6.2 at 293 K
Thermal expansion coefficient [1/K]: 5.9x10-6 293 K
Dielectric constant (static):
Refractive index:
Energy gap [eV]: 1.56
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 700
Hole: 65
Intrinsic carrier conc. [cm-3]:
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