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Material
(Index)
Definition
Cd
Cadmium
CdS
Cadmium Sulfide
General characteristics:
II-VI semiconductor used primarily in light detection (IR, visible as well as longer wavelength UV)applications (photoresistors); also used in IR optics (e.g. waveguides, beam splitters...)
Crystal structure:
wurzite (hexagonal)
Lattice constant [nm]:
Density [g/cm
3
]:
4.82
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
1750
Thermal conduct.[W/cm
o
C]:
Th. expansion coeff.[1/
o
C]:
Dielectric constant (static):
8.9
Refractive index:
2.5
Energy gap [eV]:
2.42
Type of energy gap:
direct
Drift mobility [cm
2
/V sec]:
Electron:
250
Hole
Intrinsic carrier conc. [cm
-3
]:
CdSe
Cadmium Selenide
General characteristics:
II-VI emiconductor compound potentially useful in various photonic device and solar cell applications; recently explored in the form of nanocrystalline quantum dot for LED applications.
Crystal structure:
wurzite (hexagonal)
Lattice constant [nm]:
a
0.429
;
c
0.7
Density [g/cm
3
]:
5.81
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
1268
Thermal conduct.[W/cm K]:
0.04
Th. expansion coeff.[1/
o
C]:
Dielectric constant (static):
Refractive index:
2.4
Energy gap [eV]:
1.74
Type of energy gap:
direct
Drift mobility [cm
2
/V sec]:
Electron:
900
Hole
CdTe
Cadmium Telluride
General characteristics:
II-VI compound promising in solar cell applications; also, alloyed with mercury makes an efficient infrared detector.
Crystal structure:
zinc blend
Lattice constant [nm]:
0.648
Density [g/cm
3
]:
5.85
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
1091
Thermal conduct.[W/m K]:
6.2
at 293 K
Thermal expansion coefficient [1/K]:
5.9x10
-6
293 K
Dielectric constant (static):
Refractive index:
Energy gap [eV]:
1.56
Type of energy gap:
direct
Drift mobility [cm
2
/V sec]:
Electron:
700
Hole:
65
Intrinsic carrier conc. [cm
-3
]:
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