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Material
(Index)
Definition
C
Carbon
(diamond)
General characteristics:
single crystal carbon - diamond; excellent semiconductor properties; until today not possible to obtain in the form and quantities allowing device manufacturing on a commercial scale; problems with n-type doping also hinder efforts to make active semiconductor devices using diamond.
Crystal structure:
diamond
Lattice constant [nm]:
0.357
Density [g/cm
3
]:
3.5
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
4,300
Thermal conduct.[W/cm
o
C]:
26
Th. expansion coeff.[1/
o
C]:
8x10
7
Dielectric constant (static):
5.5
Refractive index:
2.715 at 227 nm
2.410 at 656 nm
Energy gap [eV];
5.45
Type of energy gap:
indirect
Mobility [cm
2
/V sec]:
Electron:
1,900
Hole:
1,600
Intrinsic carrier conc. [cm
-3
]:
Carbon
(graphene)
a two-dimensional part of three-dimensional graphite, i.e. a single atom thick planar sheet of carbon bonded in a specific fashion; sometime referred to as "carbon sheet"; rolled into a cylinder, graphene will form a single-walled carbon nanotube; potentially usefull in the fabrication electronic devices including ballistic transistor.
Reference:
SiC
Silicon Carbide
General characteristics
: increasingly commonly used in manufacture of high-temperature, high-power devices; also used as a substrate for GaN deposition in blue laser/LED fabrication.
Crystal structure:
cubic (3C-SiC)
hexagonal (4H-SiC or 6H-SiC
)
Lattice constant [nm]:
0.436(C)
0.308(H)
Density [g/cm
3
]:
Atomic concentration [cm
-3
]:
Melting point [
o
C]:
sublimes > 2,100
Thermal conduct.[W/cm
o
C]:
5
Th. expansion coeff.[1/
o
C]:
Dielectric constant:
9.7
9.7
Refractive index:
Energy gap [eV]:
2.3 (C)
3.03(H)
Type of energy gap:
indirect
Drift mobility [cm
2
/V sec]:
Electron
800(C)
400(H)
Hole
40 (C)
100 (H)
Intrinsic carrier conc. [cm
-3
]
Reference:
Go to Semiconductor Notes for more SiC information
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