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Material
(Index)
Definition
As
Arsenic
In preparation
GaAs
Gallium Arsenide
General characteristics:
The most common (important) III-V semiconductor; used in the variety of electronic (analog and digital) and photonic (light emitters)applications; also, key component in several highly engineered III-V ternary compounds, e.g. AlGaAs.
Crystal structure:
zinc blend
Lattice constant [nm]:
0.5653
Density [g/cm
3
]:
5.32
Atomic concentration [cm
-3
]:
4.42 x 10
22
Melting point [
o
C]:
1,240
Thermal conduct.[W/cm
o
C]:
0.55
Th. expansion coeff.[1/
o
C]:
5.73x10
-6
Dielectric constant (static):
12.9
Refractive index:
3.4
Energy gap [eV]:
1.43
Type of energy gap:
direct
Drift mobility [cm
2
/V sec]:
Electron:
8,500
Hole:
400
Intrinsic carrier conc.[cm
-3
]:
2.1x10
13
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