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Material (Index) Definition
As 
Arsenic

In preparation
GaAs 
Gallium Arsenide

General characteristics: The most common (important) III-V semiconductor; used in the variety of electronic (analog and digital) and photonic (light emitters)applications; also, key component in several highly engineered III-V ternary compounds, e.g. AlGaAs.


Crystal structure: zinc blend
Lattice constant [nm]: 0.5653
Density [g/cm3]: 5.32
Atomic concentration [cm-3]: 4.42 x 1022
Melting point [oC]: 1,240
Thermal conduct.[W/cm oC]: 0.55
Th. expansion coeff.[1/oC]: 5.73x10-6
Dielectric constant (static): 12.9
Refractive index: 3.4
Energy gap [eV]: 1.43
Type of energy gap: direct
Drift mobility [cm2/V sec]:
Electron: 8,500
Hole: 400
Intrinsic carrier conc.[cm-3]: 2.1x1013
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