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Term (Index) Definition
zirconium silicate, ZrSiO4  dielectric material featuring dielectric constant about 15; thermodynamically stable with Si; in contact with Si combines characteristics of silicon dioxide,SiO2,and zirconium oxide, ZrO2; considered to be among prime candidates for a gate dielectric in next generation CMOS devices.
alternative dielectrics  dielectrics featuring dielectric constant k > 3.9 (3.9 is a dielectric constant of SiO2)and acting as gate oxides in silicon MOS devices instead of SiO2; referred to as "high-k dielectrics"; also dielectrics featuring dielectric constant k < 3.9 and used as ILD; referred to as "low-k dielectrics".
hafnium oxide, HfO2  high-k dielectric considered for next generation MOS gates; dielectric constant k ~25; limited thermal stability with silicon; thermally stable up to 700oC.
hafnium silicate, HfSiO4  high-k dielectric considered for next generation MOS gates, k~15-18; thermodynamically stable with silicon.
zirconuim oxide, zirconia, ZrO2  dielectric featuring dielectric constant k in the range of 20-25; thermodynamically stable with silicon but tends to crystallize at about 700 o; considered as an alternative gate dielectric for next generation MOS technology.
gate oxide  a layer of very thin oxide sandwiched between semiconductor and gate contact in MOS devices; can be as thin as 1 nm in advance silicon digital integrated circuits and as thick as 70 nm in discrete power MOSFETs; typically thermally grown SiO2, often nitrided; in ultra-small geometry CMOS ICs SiO2 can be replaced with dielectrics fetauring higher than SiO2 dielectric constant.
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