Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
zinc oxide, ZnO  wide bandgap AII-BVI semiconductor; Eg=3.4 eV, direct; possible blue and violet emission and UV detection; due to the Wurtzite lattice structure and similar lattice constant to GaN can be used as a substrate for GaN (lattice matched to InGaN with 22% In content); a rare case of a solid displaying semiconductor and piezoelectric properties.
direct bandgap semiconductor  semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, etc.
wide bandgap semiconductor  semiconductor featuring energy gap Eg > 2.5 eV (rather arbitrary criterion), useful in high temperature applications and emission of blue radiation (should feature direct bandgap at the same time); e.g. SiC (Eg = 2.9 eV), GaN (Eg = 3.5 eV), ZnS (Eg = 3.68 eV)
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.