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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
potential barrier
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increased potential at the junction between two materials featuring different work function; e.g. p-type and n-type semiconductor (p-n junction) or metal-semiconductor contact (Schottky diode); there is an electric field present in the barrier region; the width of the potential barrier depends on the semiconductor doping; the height of potential barrier changes with applied bias voltage (reverse bias - high potential barrier, forward bias - low potential barrier) which makes junction to display diode-like current-voltage characteristics.
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rectifying contact
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metal-semiconductor contact displaying asymmetric current-voltage characteristics, i.e. allowing high current to flow across under the forward bias condition and blocking current off under the reverse bias; this behavior is controlled by the bias voltage dependent changes of the potential barrier height in the contact region.
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work function
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energy needed to move electron in the solid atom from the Fermi level to vacuum level, i.e. to outside of the atom; convenient reference while comparing energy state of various elements and predicting electrical properties of the contact between them.
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