Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
wet cleaning  process of contaminants removal from the wafer surface in the liquid-phase; prevailing cleaning method in semiconductor manufacturing; wet cleaning chemistries are selected to form soluble compounds of surface contaminants; often enhanced by megasonic agitation; always followed by deionized water rinse and dry cycle.

Reference: Akrion, Inc.
DHF  dilute HF; SiO2 etching solution of 49% HF in water; typical mixture: 1 part HF : 100 parts H2O.
dry cleaning  process of contaminants removal from the wafer surface in the gas-phase; driven by either conversion of contaminant into volatile compound through chemical reaction, or its "knocking" off the surface via momentum transfer, or lift-off during slight etching of contaminated surface.

Reference: See Semiconductor Notes for more information
APM  Ammonia hydroxide-hydrogen Peroxide-water Mixture; typically 0.25:1:5; same as SC1 and RCA-1; cleaning solution used primarily to remove particles from the surface; also capable of removing surface organics; strong solutions can etch/roughen silicon surface; forms chemical oxide (hydrophylic surface)on Si surface; applied at temperature between 40 oC and 70 oC; typically combined with megasonic agitation.
HPM  hydrochloric acid-hydrogen peroxide-water mixture typically 1:1:5; same as SC2 and RCA2; cleaning solution used primarily to remove metallic contaminants; gradually replaced with alternative recipes such as those involving very weak solutions of HF:HCl in water.
megasonic agitation, megasonic scrubbing  used to enhance particle removal from wafer surface by sonic pressure; megasonic energy at the frequency in 500-1000 kHz range is applied to the liquid (typically APM cleaning solution) in which wafers are immersed; more effective and less potentially damaging to the wafer (reduced cavitation) than ultrasonic agitation; standard feature in the immersion cleaning tools.

Reference: Akrion, Inc.
ozonated water  water with ozone dissolved in it to increase its oxidizing strength; commonly used in semiconductor processing to remove organic contaminants from the wafer surface.
IMEC clean  wet cleaning sequence developed at the Interuniveristy Microelectronics Center in Leuven, Belgium; includes three cleaning steps: SOM+APM+dHF/HCl with DI water rinses in between and Marangoni drying at the end.

Reference: IMEC
supercritical fluid  state of matter into which gases and liquids are converted at elevated temperature and high pressure; supercritical fluid has characteristic of both liquid and a gas; it lacks any surface tension while interacting with solid surfaces, and hence, can readily penetrates high aspect ratio geometrical features; it has very low viscosity and, like a liquid, easily dissolves large quantities of other chemicals; in semiconductor processing used in surface cleaning when penetration of very tight geometrical features is required; typically supercritical CO2 is used as carrier of cleaning agents.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.