Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
well  term commonly refers to implanted/diffused region in Si wafer needed to implement complementary MOS (CMOS) cell; depending on the design either n-well or p-well is used.
Term (Index) Definition
quantum well  semiconductor heterostructure fabricated to implement quantum effects in electronic and photonic applications; typically an ultra-thin layer of narrower bandgap semiconductor is sandwiched between two layers of larger bandgap semiconductor; realized using III-V semiconductors,e.g. GaAs and AlxGa1-xAs; electrons and holes are free to move in the direction perpendicular to the crystal growth direction, but not in the direction of crystal growth, hence, are 2-dimensionally "confined" and display characteristics distinctly different than in the "open" 3-dimensional crystal.
bandgap engineering  processes in which energy gap of semiconductor is altered in the desired way by changing chemical composition of semiconductor; e.g. by adding Al bandgap of GaAs can be altered; used in superlattice fabrication.
Term (Index) Definition
retrograde well  an approach to well formation in CMOS structures; highest concentration of dopant (implanted) in the well is located at certain distance from the surface; denser, less susceptible to latch-up CMOS device result.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.