Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
velocity overshoot  occurs when the average velocity of carriers in semiconductor exceeds saturation velocity; possible during ballistic transport.
velocity saturation  at the very high electric field drift velocity of electrons saturates (typically at the level of 107 cm/s); electric field at which saturation occurs is different for different semiconductors; e.g. Si - 107 cm/s, GaAs - 107 cm/s, 6H-SiC - 2x107 cm/s.
ballistic transport  motion of electrons in ultra-small (highly confined) regions in semiconductor structures at very high electric field with velocities much higher than their equilibrium thermal velocity; balistic electrons are not subjected to scattering, and hence,they can move with ultra-high velocity; balistic transport is determined by electronic structure of semiconductor, and is different for different semiconductors; allows ultra-fast devices.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.