Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
velocity overshoot  occurs when the average velocity of carriers in semiconductor exceeds saturation velocity; possible during ballistic transport.
velocity saturation  at the very high electric field drift velocity of electrons saturates (typically at the level of 107 cm/s); electric field at which saturation occurs is different for different semiconductors; e.g. Si - 107 cm/s, GaAs - 107 cm/s, 6H-SiC - 2x107 cm/s.
ballistic transport  motion of electrons in ultra-small (highly confined) regions in semiconductor structures at very high electric field with velocities much higher than their equilibrium thermal velocity; balistic electrons are not subjected to scattering, and hence,they can move with ultra-high velocity; balistic transport is determined by electronic structure of semiconductor, and is different for different semiconductors; allows ultra-fast devices.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.