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Term (Index) Definition
uniaxial strain,  an uniaxially strain in the crystal has stress introduced in one direction; a tensile uniaxial strain created in the channel of an NMOSFET has a highly beneficial effect on electron mobility in the channel, and hence, transistor performance; engineering of strain in the channel is an important part of the state-of-the-art silicon CMOS technology.
strained film  ultra-thin layer of single-crystal material epitaxially grown on the substrate featuring different lattice constant; pseudomorphic material; difference in lattice constant causes lattice of the deposited film to be severely strained; effective mass of electrons in strained material is reduced, and hence, their mobility is higher than in the relaxed material.
strain, uniaxial,  strain in the crystal lattice created predominantly in one direction; e.g. along the length of channel in CMOS gate.
biaxial strain,  a biaxial strained crystal has stress introduced in two directions (x-y) along its surface; also referred to as global strain; just like in the case of an uniaxial strain, when created in the MOSFET channel its effect is different for NMOSFET and PMOSFET and depends on whether stress is tensile or compressive.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.