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Term (Index) Definition
ultra-thin oxide  oxide thin enough to allow substantial direct tunneling current between metal gate and semiconductor substrate in MOS devices; typically thinner than 3 nm.
tunnel oxide  oxide in MOS structures so thin that the probability of electron direct tunneling across it (i.e. between metal gate and semiconductor) is very high; in the case of Si-SiO2 based MOS devices significant direct tunneling current is observed for oxides typically less than about 3.0 nm.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.