Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
tunneling, tunneling current  transport of electron across the potential barrier without changing its energy; as opposed to electron transport "over" the barrier (thermionic emission) in which case its energy is must be changed; tunneling probability is a strong function of the width ofpotential barrier; examples: tunneling across the potential barrier at the metal-semiconductor contact, or across the potential barrier at the p-n junction, or across an oxide (direct tunneling for oxide thinner than about 3 nm, Fowler-Nordheim tunneling for oxide 5-10 nm thick) in MOS structure.
direct tunneling  tunneling in MOS structures with ultra-thin oxide (< 4 nm) during which electrons from the conduction band in semiconductor are transferred across the oxide directly (i.e. without changing energy) into the conduction band of metal; probability of direct tunneling is a very strong function of the width of the barrier electron tunnels through (oxide thickness in MOS devices)
Fowler - Nordheim tunneling, F-N  current flowing across MOS structure at the high electric field in the oxide; electrons tunnel from semiconductor conduction band into oxide conduction band through part of the potential barrier at the semiconductor-oxide interface; most likely to dominate current in MOS structures with oxide 5-10 nm thick.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.