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Semiconductor Glossary book, click here to see new prices!
With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.
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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.
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Term (Index)
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Definition
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trench isolation
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deep narrow trench etched into the semiconductor substrate is filled with oxide; such trench is located in between adjacent devices in an integrated circuit to provide electrical isolation between them.
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LOCOS
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Local Oxidation of Silicon; isolation scheme commonly used in MOS/CMOS silicon technology; thick (in the range of 500 nm) pad of thermally grown SiO2 separates adjacent devices (e.g. PMOS and NMOS transistor in CMOS structure); local oxidation is accomplished by using silicon nitride, Si3N4, to prevent oxidation of Si in selected areas, hence, "local" oxidation; prior to SiO2 pad formation silicon in between Si3N4 covered regions is implanted to form "channel stop"; Si3N4 mask is etched off following thermal oxidation and MOSFETs are ten formed in the open spaces.
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shallow trench isolation, STI
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transistor isolation used in CMOS instead of LOCOS isolation.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.
This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.
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