Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
trap,  an impurity or charged point defect in semiconductor in which minority carrier can be trapped (captured)for a period of time and then released (thermally "ejected") into the band from which it originated; this is in contrast to a recombination center in which prior to the release minority carrier is anihilated by recombination with a captured majority carrier.
recombination center,  an impurity or charged point defect in semiconductor in which a minority carrier is captured and then recombined with subsequently captured majority carrier.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.