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Term (Index) Definition
titanium oxide, TiO3  dielectric material featuring dielectric constant k=20-85 ("high-k" dielectric); not thermally stable with silicon, and hence, not used as a high-k dielectric for MOS gates.
high-k dielectric  dielectric material featuring dielectric constant k higher than 3.9 which is k of SiO2; used as gate dielectric (amorphous) in MOS devices and in storage capacitors; high k increases capacitance, or keeps in unchanged at the reduced area of MOS gate and gate dielectric sufficiently thick to prevent excessive tunneling current.

Reference: See Semiconductor Notes for more information
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