Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
thermionic emission  transport of electrons over the potential barrier at the metal-semiconductor interface or potential barrier created by the oxide in MOS structures.
potential barrier  increased potential at the junction between two materials featuring different work function; e.g. p-type and n-type semiconductor (p-n junction) or metal-semiconductor contact (Schottky diode); there is an electric field present in the barrier region; the width of the potential barrier depends on the semiconductor doping; the height of potential barrier changes with applied bias voltage (reverse bias - high potential barrier, forward bias - low potential barrier) which makes junction to display diode-like current-voltage characteristics.
Schottky diode  semiconductor diode in which metal-semiconductor contact is used to form a potential barrier.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.