Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
thermal oxidation, thermal oxide  growth of native oxide of the solid through oxidation of solid's surface at elevated temperature; results from chemical reaction of host atoms with oxygen containing ambient; thermal oxidation of silicon results in a very high quality silicon dioxide, SiO2, formed on the silicon surface; most other semiconductors do not form device quality thermal oxide, hence, term "thermal oxidation" is almost synonymous with "thermal oxidation of silicon".

Reference: Thermal oxidation of silicon.
Deal - Grove model  a model describing kinetics of thermal oxidation of silicon based on chemical reaction between silicon and oxidizing species; most accurate for oxides thicker than about 30 nm; of limited use for oxide thinner than about 10 nm; assumes surface reaction controlled oxide growth in early stage of oxidation (linear regime) and controlled by diffusion of oxidizing species through the oxide during extended oxidation (parabolic regime); one among the best established models in silicon processing.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.