Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
tantalum silicide, TaSi2  contact material in Si technology; resistivity 35-40 microohm-cm; formed at 1000 oC.
SALICIDE process  Self-Aligned Silicide process; process in which silicide contacts are formed only in those areas in which deposited metal (which after annealing becomes a metal component of the silicide) is in direct contact with silicon, hence, are self-aligned; commonly implemented in MOS/CMOS processes in which ohmic contacts to the source, drain, and poly-Si gate are formed by "salicide" process.
silicide, silicides  alloys of silicon and metals; contact materials in silicon device manufacturing; e.g. TiSi2, CoSi2, NiSi; combine advantageous features of metal contacts (e.g significantly lower resistivity than poly-Si) and poly-Si contacts(e.g. no electromigration).
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.