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Term (Index) Definition
tantalum, Ta  refractory metal; in Si processing TaN used as a barrier metal.
tantalum pentoxide, Ta2O5  oxide featuring dielectric constant k ~ 25 ("high-k" dielectric); energy gap Eg=4.2 eV; considered as an alternative to SiO2 dielectric for next generation CMOS devices; not any longer, however, due to the lack of thermal stability with silicon which makes its deposition on Si substrate without formation of an excessive interfacial SiOx impossible.
tantalum silicide, TaSi2  contact material in Si technology; resistivity 35-40 microohm-cm; formed at 1000 oC.
TaN  tantalum nitride; a barrier metal used in Cu metallization scheme.
R-MOSFET  MOSFET in which gate contact is made out of refractory metal such as tungsten (W), molybdenum (Mo), or tantalum (Ta); advantage: R-metals withstand high temperature, i.e., wafer can be subjected to elevated temperature treatments after gate formation.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.