Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
tantalum, Ta  refractory metal; in Si processing TaN used as a barrier metal.
tantalum pentoxide, Ta2O5  oxide featuring dielectric constant k ~ 25 ("high-k" dielectric); energy gap Eg=4.2 eV; considered as an alternative to SiO2 dielectric for next generation CMOS devices; not any longer, however, due to the lack of thermal stability with silicon which makes its deposition on Si substrate without formation of an excessive interfacial SiOx impossible.
tantalum silicide, TaSi2  contact material in Si technology; resistivity 35-40 microohm-cm; formed at 1000 oC.
TaN  tantalum nitride; a barrier metal used in Cu metallization scheme.
R-MOSFET  MOSFET in which gate contact is made out of refractory metal such as tungsten (W), molybdenum (Mo), or tantalum (Ta); advantage: R-metals withstand high temperature, i.e., wafer can be subjected to elevated temperature treatments after gate formation.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.