Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
surface potential  measure of the semiconductor surface departure from the state of electrical neutrality; reflected in the energy band bending at the semiconductor surface measured as energy difference between the bottom of the conduction band (or top of the valence band) at the surface and energy of the bottom of the conduction band (or top of the valence band) in the undisturbed part of the semiconductor.
barrier height  difference between potential at the surface and in the bulk of semiconductor; affected by the type of material with which semiconductor is in contact.
intrinsic Fermi level  Fermi level in an intrinsic semiconductor; located not exactly in the center of the energy gap because of the different effective mass of electron and hole.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.