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Term (Index) Definition
surface damage  process related disruption of the crystallographic order at the surface of single-crystal semiconductor substrates; typically caused by surface interactions with high energy ions during dry etching and ion implantation.
ion implantation  ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

Reference: See ion implantation animation
ion sputtering, milling  etching process; process in which high energy ions impinging on the surface of the solid cause ejection ("sputtering") of the host atoms; highly anisotropic and non-selective etching.
Reactive Ion Etching, RIE  variation of plasma etching in which during etching semiconductor wafer is placed on the RF powered electrode; wafer takes on potential which accelerates etching species extracted from plasma toward the etched surface; chemical etching reaction is preferentially taking place in the direction normal to the surface, i.e. etching is more anisotropic than in plasma etching but is less selective; leaves etched surface damaged; the most common etching mode in semiconductor manufacturing.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.