Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
stripping  process of material removal from the wafer surface; typically implies that removal is not carried out for the pattering purpose, e.g. resist stripping in which case entire resist is removed following lithography and etching.
etching, etch  subtractive process in the course of which a solid is either dissolved in liquid chemicals (wet etching) or converted into gaseous compound (dry etching); one among key processes in semiconductor manufacturing.
photoresist  photo-sensitive material used in photolithography to transfer pattern from the mask onto the wafer; a liquid deposited on the surface of the wafer as a thin film then solidified by low temperature anneal; in the areas in which photoresist can be reached by UV radiation photochemical reactions change its properties, specifically, solubility in the developer; two types of photoresist: positive and negative.
Term (Index) Definition
resist stripping  resist removal; process in which resist is removed from the surface when its is not needed any longer, i.e. after completion of etching operation, or ion implantation; can be greatly hampered by changes in the chemical composition of the resist occurring during processing, e.g. during ion implantation; carried out using either wet or dry (ashing) strongly oxidizing chemistries; can be greatly hampered by changes in chemical composition of the resist occuring during processing, e.g. during ion implantation.
barrel reactor  "barrel" shaped reactor most commonly used for batch plasma resist stripping (ashing).
SOM  Sulphuric (acid)- Ozone (H2SO4 :O3)Mixture; increasingly common cleaning solution designed to remove organic contaminants from the wafer surface; as more economical replaces SPM cleaning mixture.
stripping  process of material removal from the wafer surface; typically implies that removal is not carried out for the pattering purpose, e.g. resist stripping in which case entire resist is removed following lithography and etching.
ashing  removal (by volatilization) of organic materials (e.g. photoresist) from the wafer surface using strongly oxidizing ambient; e.g. oxygen plasma ashing.
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