Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
stress  occurs at the interfaces between materials featuring different crystallographic structure and/or different thermal expansion coefficient resulting from different chemical composition.
Term (Index) Definition
bias-temperature stress  see BTS
BTS  bias-temperature stress; reliability test in which device is electrically stressed at increased temperature; commonly used in C-V characterization of MOS devices.
capacitance-voltage, C-V, measurements  several parameters of semiconductor materials and structures can be determined by measuring C-V characteristics; routinely used for process diagnostics and monitoring in MOS technology; allows determination of interface trap density, fixed charge and oxide charge.
Term (Index) Definition
constant - current stress, CCS  technique used to study time dependent breakdown of gate oxide; constant current featuring predetermined density is injected into the oxide until it breaks down (gate voltage drops to zero).
TDDB  Time Dependent Dielectric Breakdown; common technique to evaluate reliability of gate oxides in MOS devices; either time needed to break an oxide stressed with high voltage is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS -Constant Current Stress).
constant voltage stress, CVS  technique used to study time dependent breakdown of gate oxide; constant voltage is applied to the gate until oxide breaks down (rapid, irreversible increase of the gate current).
Term (Index) Definition
constant voltage stress, CVS  technique used to study time dependent breakdown of gate oxide; constant voltage is applied to the gate until oxide breaks down (rapid, irreversible increase of the gate current).
constant - current stress, CCS  technique used to study time dependent breakdown of gate oxide; constant current featuring predetermined density is injected into the oxide until it breaks down (gate voltage drops to zero).
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