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Term (Index) Definition
straggle  standard deviation of the Gaussian distribution of implanted ions in the direction of ions motion.
ion implantation  ions accelerated toward solid surface penetrate solid up to certain depth (see "projected range") determined by ion energy; used to introduce dopants, to form buried layers and to modify solid surfaces; concentration of implanted dopant atoms depends on ion dose; i.i. is the most common technique of dopant introduction in advanced semiconductor manufacturing.

Reference: See ion implantation animation
transverse straggle  standard deviation of the distribution of implanted ions in the direction normal to the direction of ions motion.
Term (Index) Definition
transverse straggle  standard deviation of the distribution of implanted ions in the direction normal to the direction of ions motion.
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