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Term (Index) Definition
source-drain engineering  changes in the configuration (depth in the Si substrate and heights above the Si surface)and doping of source and drain regions in MOSFET/CMOS; needed to keep on improving device performance.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.