Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
source  one of three terminals in Field Effect Transistors; a heavily doped region from which majority carriers are flowing into the channel.
drain  heavily doped region in semiconductor substrates located at the end of the channel in Field Effect Transistors; carriers are flowing out of the transistor through the drain.
Field Effect Transistor, FET  transistor in which output current (source-drain current)is controlled by the voltage applied to the gate which can be either an MOS structure (MOSFET), a p-n junction (JFET), or metal-semiconductor contact (MESFET); FET is an unipolar transistor, i.e. current is controlled by majority carriers only.
gate  structure used to control output current (i.e. flow of carriers in the channel) in the field effect transistor (FET); in MOSFET gate is comprised of gate contact and thin oxide; in MESFET gate is a Schottky contact; in JFET: metal and p-n junction.
Term (Index) Definition
diffusion source  source of dopant atoms used in semiconductor doping processes; gas, liquid, and solid sources are available.
diborane, B2H6  gaseous compound commonly used in silicon manufacturing as a source of boron (B, p-type dopant in Si).
phosphine, PH3  gaseous compound (toxic) commonly used in silicon manufacturing as a source of phosphorus (P, n-type dopant in Si).
Term (Index) Definition
elevated source  source region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where source region must be extremely shallow (less than about 30 nm); e.g. in ultra-thin SOI CMOS devices.
elevated drain  drain region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where drain region must be extremely shallow (less than about 30 nm); e.g. in ultra-thin SOI CMOS devices.
source  one of three terminals in Field Effect Transistors; a heavily doped region from which majority carriers are flowing into the channel.
elevated drain  drain region in MOSFET/CMOS is extended above the surface of the wafer by means of selective epitaxy; needed in ultra-short channel MOSFETs where drain region must beextremely shallow (as thin as about 30 nm); e.g. in ultra-thin SOI CMOS devices; same concept as raised drain.
Term (Index) Definition
Kaufman source  source of ions commonly used in ion milling equipment.
ion sputtering, milling  etching process; process in which high energy ions impinging on the surface of the solid cause ejection ("sputtering") of the host atoms; highly anisotropic and non-selective etching.
Term (Index) Definition
Solid State Light Source, SSLS,  Besides currently most common use in displays, high power Light Emitting Diodes (LEDs)are incerasingly often used for lighting purposes; semiconductor diodes are by far more afficient and cheaper sources of white light than conventional bulbs.
Term (Index) Definition
unlimited source diffusion  see predeposition.
predeposition  semiconductor doping by diffusion; process of thermal oxidation of silicon in the ambient containing dopant atoms; heavily doped oxide formed is acting as a source of dopant during the diffusion.
limited-source diffusion  also known as drive-in; concentration of diffusant (dopant) on the surface decreases during the diffusion process, i.e. while some dopant atoms diffuse into the substrate no new dopant atoms are supplied to the surface of the wafer.
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