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Term (Index) Definition
silicon-silicon dioxide, Si-SiO2, system  key element of the silicon MOS/CMOS gates; as such, very likely the most researched material system of all; formed by thermal oxidation of silicon;its most important part: interface between Si and SiO2 within which structural transistion (from single-crystal Si to amorphous SiO2) and chemical transition (from Si to SiO2) takes place; quality of Si-SiO2 system has critical impact on the performance of silicon MOS/CMOS devices.
interface trap  electrically active defect located at the interface between oxide and semiconductor; capable of trapping and de-trapping charge carriers interface traps have an adverse effect on device performance.
silicon dioxide, SiO2  silica; native oxide of silicon and at the same time an excellent insulator; the most common insulator in semiconductor device technology, particularly in silicon MOS/CMOS where it is use as a gate oxide; high quality films are obtained by thermal oxidation of silicon; thermal SiO2 forms smooth, low-defect interface with Si; can be also readily deposited by CVD; SiO2 performs various functions in silicon device technology which to large degree depends on outstanding characteristics of; also used in non-Si devices; Key parameters: energy gap Eg ~ 8eV, dielectric strength 5-15 x 106 V/cm depending on thickness, dielectric constant k = 3.9, density 2.3 g/cm3, refractive index n =1.46, melting point ~ 1700 oC; prone to contamination with alkali ions and sensitive to high energy radiation; in semiconductor technology used in the form amorphous thin films; single crystal SiO2 is known as quartz.
silicon oxidation  term commonly refers to the processof thermal oxidation which forms a thin layer of SiO2 on silicon surface.
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