Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
silicon-silicon dioxide, Si-SiO2, system  key element of the silicon MOS/CMOS gates; as such, very likely the most researched material system of all; formed by thermal oxidation of silicon;its most important part: interface between Si and SiO2 within which structural transistion (from single-crystal Si to amorphous SiO2) and chemical transition (from Si to SiO2) takes place; quality of Si-SiO2 system has critical impact on the performance of silicon MOS/CMOS devices.
interface trap  electrically active defect located at the interface between oxide and semiconductor; capable of trapping and de-trapping charge carriers interface traps have an adverse effect on device performance.
silicon dioxide, SiO2  silica; native oxide of silicon and at the same time an excellent insulator; the most common insulator in semiconductor device technology, particularly in silicon MOS/CMOS where it is use as a gate oxide; high quality films are obtained by thermal oxidation of silicon; thermal SiO2 forms smooth, low-defect interface with Si; can be also readily deposited by CVD; SiO2 performs various functions in silicon device technology which to large degree depends on outstanding characteristics of; also used in non-Si devices; Key parameters: energy gap Eg ~ 8eV, dielectric strength 5-15 x 106 V/cm depending on thickness, dielectric constant k = 3.9, density 2.3 g/cm3, refractive index n =1.46, melting point ~ 1700 oC; prone to contamination with alkali ions and sensitive to high energy radiation; in semiconductor technology used in the form amorphous thin films; single crystal SiO2 is known as quartz.
silicon oxidation  term commonly refers to the processof thermal oxidation which forms a thin layer of SiO2 on silicon surface.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.