Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
silicon germanium, SiGe  an alloy featuring energy gap narrower than Si and wider than Ge; energy gap varies as a function of Ge concentration in SiGe; features increased electron mobility as compared to Si; epitaxially deposited to form base in HBT (Si emitter); significant improvement of HBT's characteristics over all-Si bipolar transistor; in CMOS technology SiGe is used to form strained Si layer to act as a channel.

Reference: SemiOneSource,Notes
strained silicon  very thin layer of single-crystal silicon with built-in strain (stress) to accelerate electrons; allows manufacture of faster devices.

Reference: See Semiconductor Notes for more information
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.