Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
silicon carbide, SiC  semiconductor featuring energy gap Eg = 2.9 -3.05 eV (wide bandgap semiconductor), indirect bandgap; SiC can be obtained in several polytypes- most common hexagonal in the form of either 4H or 6H polytypes; parameters vary depending on polytype; higher than Si and GaAs electron saturation velocity; carrier mobility: electrons 100-500 cm2/Vs, holes 20 cm2/Vs; thermal conductivity 3 W/cmK (two times higher than Si); excellent semiconductor, however, difficult and expensive to fabricate in the form of single-crystal wafers; best suited for high power, high temperature devices; also limited use in photonic devices (e.g. substrate for GaN).

Reference: SemiOneSource,Notes
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.