Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
silicon, Si  element from the IVth group of periodic table, the most common semiconductor, atomic number 14, energy gap Eg = 1.12 eV - indirect; crystal structure - diamond, lattice constant 0.543 nm, atomic concentration 5x1022 atoms/cm-3, index of refraction 3.42, density 2.33 g/cm3, dielectric constant 11.7, intrinsic carrier concentration 1.02 x 1010 cm-3, mobility of electrons and holes at 300 K: 1450 and 500 cm2/V-s, thermal conductivity 1.31 W/cm-oC, thermal expansion coefficient 2.6 x 10-6 1/oC, melting point 1414 oC; native oxide SiO2 is a very high quality insulator; Si features excellent mechanical properties (MEMS applications); single crystal Si can be processed into wafers up to 300 mm in diameter.
amorphous Si, a-Si  non-crystalline thin-film silicon; features no long-range crystallographic order; inferior electrical characteristics as compared to single-crystal and poly Si but cheaper and easier to manufacture; used primarily to fabricate solar cells.
polycrystalline silicon, poly Si  crystalline Si in which long range order is maintained only within limited grains; heavily doped poly Si is commonly used as a gate contact in silicon MOS and CMOS devices; in saome cases also as an interconnect material in
silicon dioxide, SiO2  silica; native oxide of silicon and at the same time an excellent insulator; the most common insulator in semiconductor device technology, particularly in silicon MOS/CMOS where it is use as a gate oxide; high quality films are obtained by thermal oxidation of silicon; thermal SiO2 forms smooth, low-defect interface with Si; can be also readily deposited by CVD; SiO2 performs various functions in silicon device technology which to large degree depends on outstanding characteristics of; also used in non-Si devices; Key parameters: energy gap Eg ~ 8eV, dielectric strength 5-15 x 106 V/cm depending on thickness, dielectric constant k = 3.9, density 2.3 g/cm3, refractive index n =1.46, melting point ~ 1700 oC; prone to contamination with alkali ions and sensitive to high energy radiation; in semiconductor technology used in the form amorphous thin films; single crystal SiO2 is known as quartz.
silicon germanium, SiGe  an alloy featuring energy gap narrower than Si and wider than Ge; energy gap varies as a function of Ge concentration in SiGe; features increased electron mobility as compared to Si; epitaxially deposited to form base in HBT (Si emitter); significant improvement of HBT's characteristics over all-Si bipolar transistor; in CMOS technology SiGe is used to form strained Si layer to act as a channel.

Reference: SemiOneSource,Notes
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.