Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
resonant tunneling  effect occurring primarily in quantum well double barrier heterostructures; for a given thickness of the well and at the certain bias voltage r.t. causes rapid increase of current flowing across the structure.
tunneling, tunneling current  transport of electron across the potential barrier without changing its energy; as opposed to electron transport "over" the barrier (thermionic emission) in which case its energy is must be changed; tunneling probability is a strong function of the width ofpotential barrier; examples: tunneling across the potential barrier at the metal-semiconductor contact, or across the potential barrier at the p-n junction, or across an oxide (direct tunneling for oxide thinner than about 3 nm, Fowler-Nordheim tunneling for oxide 5-10 nm thick) in MOS structure.
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Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.