Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
resist stripping  resist removal; process in which resist is removed from the surface when its is not needed any longer, i.e. after completion of etching operation, or ion implantation; can be greatly hampered by changes in the chemical composition of the resist occurring during processing, e.g. during ion implantation; carried out using either wet or dry (ashing) strongly oxidizing chemistries; can be greatly hampered by changes in chemical composition of the resist occuring during processing, e.g. during ion implantation.
barrel reactor  "barrel" shaped reactor most commonly used for batch plasma resist stripping (ashing).
SOM  Sulphuric (acid)- Ozone (H2SO4 :O3)Mixture; increasingly common cleaning solution designed to remove organic contaminants from the wafer surface; as more economical replaces SPM cleaning mixture.
stripping  process of material removal from the wafer surface; typically implies that removal is not carried out for the pattering purpose, e.g. resist stripping in which case entire resist is removed following lithography and etching.
ashing  removal (by volatilization) of organic materials (e.g. photoresist) from the wafer surface using strongly oxidizing ambient; e.g. oxygen plasma ashing.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.