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Term (Index) Definition
resist  material sensitive to irradiation i.e. changes its chemical properties when irradiated; in the form of thin film used as a pattern transfer layer in lithographic processes in semiconductor manufacturing.
photoresist  photo-sensitive material used in photolithography to transfer pattern from the mask onto the wafer; a liquid deposited on the surface of the wafer as a thin film then solidified by low temperature anneal; in the areas in which photoresist can be reached by UV radiation photochemical reactions change its properties, specifically, solubility in the developer; two types of photoresist: positive and negative.
Term (Index) Definition
DUV resist  photoresist used in conjunction with 248 nm exposure tools (KrF excimer laser).
Term (Index) Definition
electron beam (e-beam) resist  resist used in e-beam lithography.
Term (Index) Definition
imaging resist  layer of photoresist in which photochemical reactions resulting from irradiation are taking place; as the wavelength of radiation is getting shorter, and hence absorption coefficient increases, thickness of imaging resit is gradually reduced.
resist  material sensitive to irradiation i.e. changes its chemical properties when irradiated; in the form of thin film used as a pattern transfer layer in lithographic processes in semiconductor manufacturing.
planarizing resist  thick layer of photoresist deposited on the surface to planarize the surface; imaging resist is deposited on top of it.
Term (Index) Definition
multilayer resist  in order to improve resolution of the pattern transfer process more than one layer of resist are used; in the simple version of such scheme bottom (thicker) layer planarizes surface while top (very thin)layer acts as an imaging resist .
planarization  process of flatting of the surface of the wafer; done either by deposition of additional material and back polishing it, or by deposition and re-flowing of SiO2 doped with P and B (BPSG), or by depositing thick layer of resist.
imaging resist  layer of photoresist in which photochemical reactions resulting from irradiation are taking place; as the wavelength of radiation is getting shorter, and hence absorption coefficient increases, thickness of imaging resit is gradually reduced.
Term (Index) Definition
negative resist  resist which is initially soluble in the developer but becomes insoluble after irradiation; cross-linking between polymeric chains take place during irradiation; features lower resolution than positive resist but is more sensitive.
positive resist  resist which is initially insoluble in the developer and becomes soluble as a result of irradiation; chain scission takes place in the resist structure during irradiation; allows higher resolution than negative resist but is less sensitive.
Term (Index) Definition
photostabilization of resist  process performed after developing and hard-baking of resist and before etching or implantation; involves UV irradiation combined with low-temperature (<200 oC) heating; prevents erosion of resist and outgasing from the resist during subsequent processes.
resist  material sensitive to irradiation i.e. changes its chemical properties when irradiated; in the form of thin film used as a pattern transfer layer in lithographic processes in semiconductor manufacturing.
Term (Index) Definition
planarizing resist  thick layer of photoresist deposited on the surface to planarize the surface; imaging resist is deposited on top of it.
planarization  process of flatting of the surface of the wafer; done either by deposition of additional material and back polishing it, or by deposition and re-flowing of SiO2 doped with P and B (BPSG), or by depositing thick layer of resist.
imaging resist  layer of photoresist in which photochemical reactions resulting from irradiation are taking place; as the wavelength of radiation is getting shorter, and hence absorption coefficient increases, thickness of imaging resit is gradually reduced.
Term (Index) Definition
positive resist  resist which is initially insoluble in the developer and becomes soluble as a result of irradiation; chain scission takes place in the resist structure during irradiation; allows higher resolution than negative resist but is less sensitive.
negative resist  resist which is initially soluble in the developer but becomes insoluble after irradiation; cross-linking between polymeric chains take place during irradiation; features lower resolution than positive resist but is more sensitive.
Term (Index) Definition
resist ashing  process of resist removal in strongly oxidizing gaseous atmosphere.
Term (Index) Definition
resist stripping  resist removal; process in which resist is removed from the surface when its is not needed any longer, i.e. after completion of etching operation, or ion implantation; can be greatly hampered by changes in the chemical composition of the resist occurring during processing, e.g. during ion implantation; carried out using either wet or dry (ashing) strongly oxidizing chemistries; can be greatly hampered by changes in chemical composition of the resist occuring during processing, e.g. during ion implantation.
barrel reactor  "barrel" shaped reactor most commonly used for batch plasma resist stripping (ashing).
SOM  Sulphuric (acid)- Ozone (H2SO4 :O3)Mixture; increasingly common cleaning solution designed to remove organic contaminants from the wafer surface; as more economical replaces SPM cleaning mixture.
stripping  process of material removal from the wafer surface; typically implies that removal is not carried out for the pattering purpose, e.g. resist stripping in which case entire resist is removed following lithography and etching.
ashing  removal (by volatilization) of organic materials (e.g. photoresist) from the wafer surface using strongly oxidizing ambient; e.g. oxygen plasma ashing.
Term (Index) Definition
X-ray resist  resist used in X-ray lithography.
X-ray lithography  lithography method using X-ray to expose the resist; due to shorter wavelength of X-ray radiation (0.4 - 4 nm)XRL allows higher resolution than photolithography which uses longer wavelength UV irradiation; XRL requires special mask and resists sensitive to X-rays.
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