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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


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Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
raised source-drain  feature of the advanced CMOS/MOSFET design; source and drain regions are raised (additional layer of Si is deposited epitaxially)with respect to the plane of the gate oxide-Si substrate interface to improve device performance.
MOSFET  Metal-Oxide-Semiconductor Field Effect Transistor; FET with MOS structure as a gate; current flows in the channel between source and drain; channel is created by applying adequate potential to the gate contact and inverting semiconductor surface underneath the gate; MOSFET structure is implemented almost uniquely with Si and SiO2 gate oxide; efficient switching device which dominates logic and memory applications; PMOSFET (p-channel, n-type Si substrate) and NMOSFET (n-channel,p-type Si substrate) combined form basic CMOS cell.
TeraHertz Transistor  transistor operating in the e12 Hz (1,000 GHz) frequency range; uses SOI substrate (DST), high-k gate dielectric and raised source and drain.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.



This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.


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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.