Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
pseudomorphic material  term concerns lattice-mismatched heterostructures; psuedomorphic film is a layer of single-crystal material on single-crystal substrate featuring slightly different chemical composition, and hence, slightly different lattice constant; lattice mismatch is accommodated by strain in the film; thinner than certain critical thickness (hc)above which stress in the film is released by formation of dislocation.
superlattice  semiconductor structure comprising of several ultra-thin layers (atomic layers) engineered to obtain specific electronic and photonic properties; slight modifications of chemical composition of each layer result in slight variations of energy bandgap from layer to layer: bandgap engineering; fabrication of superlattices requires high-precision heteroepitaxial deposition methods such as MBE and MOCVD; typically involves III-V semiconductors.
lattice mismatch  term refers to the situation where two materials featuring different lattice constants are brought together by deposition of one material on top of another; in general, lattice mismatch will prevent growth of defect-free epitaxial film unless thickness of the film is below certain critical thickness; in this last case lattice mismatch is compensated by the strain in the film.
strained silicon  very thin layer of single-crystal silicon with built-in strain (stress) to accelerate electrons; allows manufacture of faster devices.

Reference: See Semiconductor Notes for more information
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