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Term (Index) Definition
proximity printing  exposure techniques used in photolithography in which during exposure mask is not in contact with resist (is separated from the wafer surface by some 20 m); mask damage is less likely than during contact printing, but resolution of pattern transfer is limited to about 2 m.
projection printing  exposure technique used in photolithography in which mask (reticle) image is projected on the surface of the wafer through the complex system of image correcting lenses (think of an old fashion slide projector in which slide is the mask and screen is a surface of the wafer); assures the highest resolution among all exposure methods; implemented using steppers in which resist on the surface of the wafer is exposed step-by-step (step and repeat process) as opposed to full-field exposure in which the entire wafer is exposed in one shot.

Reference: See Semiconductor Notes for more information
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