Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
progressive breakdown  gradual degradation, and eventual breakdown, of the very thin gate oxide in MOS devices under the prolonged electric field stress.
oxide breakdown  irriversible change in physical properties of an insulating oxide as a result of very high electric field in the oxide; as a result of "breakdown" oxide no longer displays insulating properties.

Reference: See Semiconductor Note #20 for more information
Time-Dependent Dielectric Breakdown, TDDB  technique to evaluate reliability of gate oxides in MOS devices; breakdown of the oxide resulting from the prolonged stress; either time needed to break voltage stressed oxide is measured (CVS - Constant Voltage Stress), or time of current injection into the oxide after which oxide fails (CCS - Constant Current Stress).

Reference: Click here for additional information
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