Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
pre-damage implants  implantation of silicon or germanium into silicon surface region prior to source/drain doping implants; the goal is to pre-amorphize Si and by doing so to suppress channeling during subsequent source/drain implants; better control of the depth of implanted junctions is achieved.
channeling  effect occurring during implantation into crystalline solids; implanted specie may enter open "channel" in crystal lattice as a result of which it may penetrate the solid deeper than other implanted species subjected to collisions with atoms in the lattice; probability of channeling increases with implant energy.
shallow junction  term typically refers to a depth of the source and drain regions in advanced CMOS; scaling rules require continued reduction of the junction depth; can be as shallow as 10 nm.
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