Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
pre-damage implants  implantation of silicon or germanium into silicon surface region prior to source/drain doping implants; the goal is to pre-amorphize Si and by doing so to suppress channeling during subsequent source/drain implants; better control of the depth of implanted junctions is achieved.
channeling  effect occurring during implantation into crystalline solids; implanted specie may enter open "channel" in crystal lattice as a result of which it may penetrate the solid deeper than other implanted species subjected to collisions with atoms in the lattice; probability of channeling increases with implant energy.
shallow junction  term typically refers to a depth of the source and drain regions in advanced CMOS; scaling rules require continued reduction of the junction depth; can be as shallow as 10 nm.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.