Semiconductor Glossary, Developed Semi OneSource.
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Term (Index) Definition
positive charge dielectric  dielectric material used in the form of thin-film in semiconductor technology which features defects that are inherently predominantly positively charged; e.g. SiO2.
silicon dioxide, SiO2  silica; native oxide of silicon and at the same time an excellent insulator; the most common insulator in semiconductor device technology, particularly in silicon MOS/CMOS where it is use as a gate oxide; high quality films are obtained by thermal oxidation of silicon; thermal SiO2 forms smooth, low-defect interface with Si; can be also readily deposited by CVD; SiO2 performs various functions in silicon device technology which to large degree depends on outstanding characteristics of; also used in non-Si devices; Key parameters: energy gap Eg ~ 8eV, dielectric strength 5-15 x 106 V/cm depending on thickness, dielectric constant k = 3.9, density 2.3 g/cm3, refractive index n =1.46, melting point ~ 1700 oC; prone to contamination with alkali ions and sensitive to high energy radiation; in semiconductor technology used in the form amorphous thin films; single crystal SiO2 is known as quartz.
oxide fixed charge, Qf  charge in Si-SiO2 structure; located in the oxide in the immediate vicinity of Si surface; does not move and exchange charge with Si, hence, "fixed"; associated with incompletely oxidized silicon or in other words, with excess silicon; lower density at higher temperature of oxidation; can be lowered by post-oxidation anneal in N2 or Ar; fixed charge alters characteristics of Si-SiO2 based MOS gate stacks.
negative charge dielectric  dielectric material used in the form of thin-film in semiconductor technology which features defects that are inherently predominantly negatively charged; e.g. Al2O3.
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