Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.


Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
porous dielectric  porosity (air gaps) is created in ILD (Inter-Layer Dielectric)to reduce its dielectric constant.
low-k dielectric  dielectric material featuring dielectric constant k lower than 3.9 which is k of SiO2; used to insulate adjacent metal lines (interlayer dielectric, ILD) in advanced integrated circuits; low k reduces undesired capacitive coupling, and hence "cross talk", between lines.

Reference: SemiOneSource,Notes
nanoglass  porous glass; porous SiO2; porosity (air gaps) are created in a material in order to reduce its dielectric constank k from k=3.9 for non-porous SiO2 to to as low as k=1.3.
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Jerzy Ruzyllo is a Distinguished Professor Emeritus in the Department of Electrical Engineering at Penn State University.

This book gives a complete account of semiconductor engineering covering semiconductor properties, semiconductor materials, semiconductor devices and their uses, process technology, fabrication processes, and semiconductor materials and process characterization.

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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.