Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












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Term (Index) Definition
polycrystalline silicon, poly Si  crystalline Si in which long range order is maintained only within limited grains; heavily doped poly Si is commonly used as a gate contact in silicon MOS and CMOS devices; in saome cases also as an interconnect material in
amorphous Si, a-Si  non-crystalline thin-film silicon; features no long-range crystallographic order; inferior electrical characteristics as compared to single-crystal and poly Si but cheaper and easier to manufacture; used primarily to fabricate solar cells.
gate contact  conducting material (metal, poly Si, or silicide) in the gate structure.
MOSFET  Metal-Oxide-Semiconductor Field Effect Transistor; FET with MOS structure as a gate; current flows in the channel between source and drain; channel is created by applying adequate potential to the gate contact and inverting semiconductor surface underneath the gate; MOSFET structure is implemented almost uniquely with Si and SiO2 gate oxide; efficient switching device which dominates logic and memory applications; PMOSFET (p-channel, n-type Si substrate) and NMOSFET (n-channel,p-type Si substrate) combined form basic CMOS cell.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.