Semiconductor Glossary, Developed Semi OneSource.

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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.

Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.

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Term (Index) Definition
polycrystalline silicon, poly Si  crystalline Si in which long range order is maintained only within limited grains; heavily doped poly Si is commonly used as a gate contact in silicon MOS and CMOS devices; in saome cases also as an interconnect material in
amorphous Si, a-Si  non-crystalline thin-film silicon; features no long-range crystallographic order; inferior electrical characteristics as compared to single-crystal and poly Si but cheaper and easier to manufacture; used primarily to fabricate solar cells.
gate contact  conducting material (metal, poly Si, or silicide) in the gate structure.
MOSFET  Metal-Oxide-Semiconductor Field Effect Transistor; FET with MOS structure as a gate; current flows in the channel between source and drain; channel is created by applying adequate potential to the gate contact and inverting semiconductor surface underneath the gate; MOSFET structure is implemented almost uniquely with Si and SiO2 gate oxide; efficient switching device which dominates logic and memory applications; PMOSFET (p-channel, n-type Si substrate) and NMOSFET (n-channel,p-type Si substrate) combined form basic CMOS cell.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.