Semiconductor Glossary, Developed Semi OneSource.
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With over 2000 terms defined and explained, Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today.












Including some 500 new terms defined and remaining terms updated and modified, a 2nd edition book version of this glossary is now available.


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Term (Index) Definition
poly - Si gate  polycrystalline Si gate commonly used as a gate contact in MOS/CMOS devices; used instead of metal gates because work function of poly-Si matches work function of Si substrate much closer than metals, hence, threshold voltage of transistor is significantly lower; also, poly Si is more resistant to temperature than, for instance, Al; drawback: in spite of being very heavily doped (and essentially acting as a conductor) poly-Si features resistivity two orders of magnitude higher than typical metals; moreover, poly-Si gets easily oxidized at the interface with gate oxide which is unacceptable in the case high-k dielectric is used as a gate oxide.
gate  structure used to control output current (i.e. flow of carriers in the channel) in the field effect transistor (FET); in MOSFET gate is comprised of gate contact and thin oxide; in MESFET gate is a Schottky contact; in JFET: metal and p-n junction.
gate contact  conducting material (metal, poly Si, or silicide) in the gate structure.
MOSFET  Metal-Oxide-Semiconductor Field Effect Transistor; FET with MOS structure as a gate; current flows in the channel between source and drain; channel is created by applying adequate potential to the gate contact and inverting semiconductor surface underneath the gate; MOSFET structure is implemented almost uniquely with Si and SiO2 gate oxide; efficient switching device which dominates logic and memory applications; PMOSFET (p-channel, n-type Si substrate) and NMOSFET (n-channel,p-type Si substrate) combined form basic CMOS cell.
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Created and operated by J. Ruzyllo. Copyright J. Ruzyllo 2001-2016. All rights reserved.

Information in this glossary is provided at the author's discretion. Any liability based on, or related to the contents of this glossary is disclaimed.